منابع مشابه
Pressure-induced metallization of silane.
There is a great interest in electronic transitions in hydrogen-rich materials under extreme conditions. It has been recently suggested that the group IVa hydrides such as methane (CH(4)), silane (SiH(4)), and germane (GeH(4)) become metallic at far lower pressures than pure hydrogen at equivalent densities because the hydrogen is chemically compressed in group IVa hydride compounds. Here we re...
متن کاملPressure-induced metallization in Mg2Si
Mg2Si with narrow band gap has attracted increasing interest for its great potential applications. Theoretical calculations have predicted the metallization of Mg2Si under high pressure. In this work, the electrical resistance and Raman spectrum measurements of semiconducting Mg2Si were performed to investigate the metallization of Mg2Si by using diamond anvil cells and strip opposite anvils. A...
متن کاملPressure-induced metallization in solid boron
Different phases of solid boron under high pressure are studied by first principles calculations. The α-B12 structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero around 160 GPa, where the material transforms to a weak metal. The metallicity, as measured by the density of states at the Fermi level, enhances as the pressure is further i...
متن کاملNovel pressure-induced interactions in silane-hydrogen.
We report novel molecular compound formation from silane-hydrogen mixtures with intermolecular interactions unprecedented for hydrogen-rich solids. A complex H_{2} vibron spectrum with anticorrelated pressure-frequency dependencies and a striking H-D exchange below 10 GPa reveal strong and unusual attractive interactions between SiH_{4} and H_{2} and molecular bond destabilization at remarkably...
متن کاملHydrogen segregation and its roles in structural stability and metallization: silane under pressure
We present results from first-principles calculations on silane (SiH4) under pressure. We find that a three dimensional P-3 structure becomes the most stable phase above 241 GPa. A prominent structural feature, which separates the P-3 structure from previously observed/predicted SiH4 structures, is that a fraction of hydrogen leaves the Si-H bonding environment and forms segregated H2 units. Th...
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ژورنال
عنوان ژورنال: Proceedings of the National Academy of Sciences
سال: 2007
ISSN: 0027-8424,1091-6490
DOI: 10.1073/pnas.0710473105